super fast recovery diode rf505tf6s ? series ? dimensions (unit : mm) ? structure standard fast recovery ? applications general rectification ? features 1)low switching loss 2)high current overload capacity ? construction silicon epitaxial planer ? absolute maximum ratings (tc=25 ?c) symbol limits unit v rm 600 v v r 600 v average rectified forward current io 5 a tj 150 ?c tstg ? 55 to ? 150 ?c ? electrical characteristics (tj=25 ?c) symbol min. typ. max. unit forward voltage v f 1.3 1.7 v i r 0.03 10 a trr 22 30 ns thermal resistance rth(j-c) 3 c/w one cycle peak value, tj=25c reverse voltage repetitive peak reverse voltage parameter conditions 80 a storage temperature junction temperature forward current surge peak i fsm conditions i f =5a parameter junction to case reverse recovery time v r =600v i f =0.5a,i r =1a,irr=0.25i r reverse current duty 0.5 direct voltage 60hz half sin wave, resistance load, tc=125c 60hz half sin wave, non-repetitive rohm : to220nfm manufacture yea r rf505 tf6s manufacture week 1/4 2011.10 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rf505tf6s 0.001 0.01 0.1 1 10 100 0 500 1000 1500 2000 2500 tj=125 c tj=25 c tj=150 c forward voltage : v f (mv) v f - i f characteristics forward current:i f (a) 1 10 100 1000 10000 100000 1000000 0 100 200 300 400 500 600 tj=125 c tj=25 c tj=150 c reverse current:i r (na) reverse voltage : v r (v) v r - i r characteristics 1 10 100 1000 0 5 10 15 20 25 30 capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics f=1mhz 1000 1100 1200 1300 1400 1500 i f =5a tj=25 c v f dispersion map forward voltage:v f (mv) ave:1247mv 1 10 100 1000 v r =600v tj=25 c reverse current : i r (na) i r dispersion map ave:22.4na 120 140 160 180 ave:150.2pf capacitance between terminals:ct(pf) ct dispersion map f=1mhz v r =0v tj=25 c 2/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rf505tf6s 100 150 200 ave:136.5a 8.3ms i fsm 1cyc i fsm dispersion map peak surge forward current:i fsm (a) 0 5 10 15 20 25 30 ave:22.0ns trr dispersion map reverse recovery time:trr(ns) i f =0.5a i r =1a irr=0.25*i r tj=25 c 10 100 1000 1 10 100 8.3ms i fsm 1cyc 8.3ms peak surge forward current:i fsm (a) number of cycles i fsm - cycle characteristics 10 100 1000 1 10 100 t i fsm peak surge forward current:i fsm (a) time:t(ms) i fsm - t characteristics 0 5 10 15 20 25 30 c=200pf r=0 c=100pf r=1.5k ave 19.9kv no break at 30kv electrostatic discharge test esd(kv) esd dispersion map 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 rth(j - c) rth(j - a) time:t(s) rth - t characteristics transient thermal impedance:rth ( c /w) 3/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rf505tf6s 0 1 2 3 4 5 6 7 8 0 2 4 6 8 10 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 forward power dissipation:pf(w) average rectified forward current io(a) io - pf characteristics 0 1 2 3 4 5 6 7 8 9 0 30 60 90 120 150 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 t tj=150 c d=t/t t v r io v r =480v 0a 0v ambient temperature:ta( c ) derating curve (io - ta) average rectified forward current:io(a) 0 1 2 3 4 5 6 7 8 9 0 30 60 90 120 150 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 average rectified forward current:io(a) case temperature:tc( c ) derating curve (io - tc) t tj=150 c d=t/t t v r io v r =480v 0a 0v 4/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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